Customizing back end of the line interconnects
US7300825B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2004 |
| Grant date | Nov 27, 2007 |
| Priority date | — |
| Expiry date | Jun 24, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Custom connections between pairs of copper wires in a last damascene wiring level are effected by creating openings in an overlying insulating layer which span a distance between portions of the two wires, then filling the openings with aluminum. The openings can be created (or completed) by a second, maskless UV laser exposure of positive photoresist which is used for patterning the insulating layer. If an opening is not created, an aluminum connecting shape overlying the insulating layer will not effect a connection between the two wires. Similar results can be achieved by laser exposure of a resist used to pattern the aluminum layer, thereby causing breaks in connecting shape when it is desired not to have a connection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.