Thin layer semi-conductor structure comprising a heat distribution layer
US7300853B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2004 |
| Grant date | Nov 27, 2007 |
| Priority date | — |
| Expiry date | Jun 2, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention concerns a thin layer semi-conductor structure including a semi-conductor surface layer (2) separated from a support substrate (1) by an intermediate zone (3), the intermediate zone (3) being a multi-layer electrically insulating the semi-conductor surface layer from the support substrate. The intermediate zone has a considered sufficiently good electrical quality of interface with the semi-conductor surface layer and includes at least one first layer, of satisfactory thermal conductivity to provide a considered as correct operation of the electronic device or devices which are to be elaborated from the semi-conductor surface layer (2), the intermediate zone including additionally a second insulating layer of low dielectric constant, located between the first layer and the support substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.