Systems and methods for forming metal-containing layers using vapor deposition processes
US7300873B2 · kind B2 · utility
27Cited by
4References
64Claims
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Key dates
| Filing date | Aug 13, 2004 |
| Grant date | Nov 27, 2007 |
| Priority date | — |
| Expiry date | Nov 6, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/40
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming (and an apparatus for forming) a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or memory device structure, using one or more homoleptic and/or heteroleptic precursor compounds that include, for example, guanidinate, phosphoguanidinate, isoureate, thioisoureate, and/or selenoisoureate ligands using a vapor deposition process is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.