Charge pump with ensured pumping capability
US7301388B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 22, 2004 |
| Grant date | Nov 27, 2007 |
| Priority date | — |
| Expiry date | Aug 6, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/145
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An n-stage charge pump contains n primary capacitive elements (CC1-CCn or CD1-CDn), n+1 charge-transfer cells (601-60n+1, 1101-110n+1, 1201-120n+1, or 1301-130n+1) respectively sequentially designated as the first through (n+1)th cells, and sources of first and second clock signals (VCKP and VCK P or VCKP1 and VCKP2) approximately inverse to each other. Each pump stage (62i, 112i, 122i, or 132i) includes one (CCi or CDi) of the capacitive elements and a corresponding one (60i, 110i, 120i, or 130i) of the first through nth charge-transfer cells. Each cell contains a charge-transfer FET (PTi or NTi). A pair of side FETs (PSi and PDi or NSi and NDi) are provided in the first cell, in the (n+1)th cell, and normally in each remaining cell. The side FETs in the first cell or/and the (n+1) cell are connected in such a manner as to avoid undesired bipolar action that could cause degradation in the pump's voltage gain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.