In-situ critical dimension measurement
US7301645B2 · kind B2 · utility
8Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2005 |
| Grant date | Nov 27, 2007 |
| Priority date | — |
| Expiry date | Aug 22, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of monitoring a critical dimension of a structural element in an integrated circuit is provided comprising the following steps: collecting an optical interference endpoint signal produced during etching one or more layers to form the structural element; and determining based upon the optical interference endpoint signal the critical dimension of the structural element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.