Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate
US7303630B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2004 |
| Grant date | Dec 4, 2007 |
| Priority date | — |
| Expiry date | Jul 14, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/18
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Dotted seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations from neighboring regions, accumulate the dislocations into pit bottoms, and make closed defect accumulating regions (H) on the seeds. The polycrystalline or slanting orientation single crystal closed defect accumulating regions (H) induce microcracks due to thermal expansion anisotropy. The best one is orientation-inversion single crystal closed defect accumulating regions (H). At an early stage, orientation-inverse protrusions are induced on tall facets and unified with each other above the seeds. Orientation-inverse crystals growing on the unified protrusions become the orientation-inverse single crystal closed defect accumulating regions (H).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.