Photoresist undercoat-forming material and patterning process
US7303855B2 · kind B2 · utility
58Cited by
3References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 30, 2004 |
| Grant date | Dec 4, 2007 |
| Priority date | — |
| Expiry date | Dec 4, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/126
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An undercoat-forming material comprising a novolak resin having a fluorene or tetrahydrospirobiindene structure, an organic solvent, an acid generator, and a crosslinker, optionally combined with an intermediate layer having an antireflective effect, has an absorptivity coefficient sufficient to provide an antireflective effect at a thickness of at least 200 nm and a high etching resistance as demonstrated by slow etching rates with CF4/CHF3 and Cl2. BCl3 gases for substrate processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.