MSM binary switch memory device
US7303971B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2005 |
| Grant date | Dec 4, 2007 |
| Priority date | — |
| Expiry date | May 15, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A metal/semiconductor/metal (MSM) binary switch memory device and fabrication process are provided. The device includes a memory resistor bottom electrode, a memory resistor material over the memory resistor bottom electrode, and a memory resistor top electrode over the memory resistor material. An MSM bottom electrode overlies the memory resistor top electrode, a semiconductor layer overlies the MSM bottom electrode, and an MSM top electrode overlies the semiconductor layer. The MSM bottom electrode can be a material such as Pt, Ir, Au, Ag, TiN, or Ti. The MSM top electrode can be a material such as Pt, Ir, Au, TiN, Ti, or Al. The semiconductor layer can be amorphous Si, ZnO2, or InO2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.