Field effect transistor
US7304329B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2004 |
| Grant date | Dec 4, 2007 |
| Priority date | — |
| Expiry date | Oct 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/251
Abstract
A field effect transistor includes a semiconductor substrate having an active region, a source region, and a drain region at an upper portion of the substrate. The active region is located between the source and drain regions. A gate electrode is located on the active region. A source electrode is located on the source region and forms an ohmic contact with the source region. A drain electrode has a base part on and in ohmic contact with the drain region and an extended part having edge close to the gate electrode and over a boundary between the active region and the drain region. An insulating film is located between the boundary and the extended part and has a thickness that increases along a direction from the drain electrode toward the gate electrode in a step-by-step or continuous manner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.