Vertically-integrated waveguide photodetector apparatus and related coupling methods
US7305157B2 · kind B2 · utility
50Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2005 |
| Grant date | Dec 4, 2007 |
| Priority date | — |
| Expiry date | Nov 8, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12061
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
High-speed optoelectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.