Patternable low dielectric constant materials and their use in ULSI interconnection
US7306853B2 · kind B2 · utility
48Cited by
29References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2005 |
| Grant date | Dec 11, 2007 |
| Priority date | — |
| Expiry date | Dec 21, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to ultra-large scale integrated (ULSI) interconnect structures, and more particularly to patternable low dielectric constant (low-k) materials suitable for use in ULSI interconnect structures. The patternable low-k dielectrics disclosed herein are functionalized polymers that having one or more acid-sensitive imageable functional groups.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.