Method for fabricating thin film transistor
US7306980B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2004 |
| Grant date | Dec 11, 2007 |
| Priority date | — |
| Expiry date | Jun 29, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6721
Abstract
A number of minuscule LDD thin film transistors with high precision are arranged on a substrate for use in a liquid crystal display apparatus or other similar devices. The gate electrode is used as a mask at the time of injecting impurities into the semiconductor layer. To realize an LDD structure, the impurities are injected in two installments. The size of the gate electrode is changed in accordance with the length of the LDD regions between the first and second injections. The size of the gate electrode is changed by means of metal oxidation or dry etching. For precision dry etching of the gate electrode, various ideas are put into forming the photo resist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.