Method for processing a thin semiconductor substrate
US7307010B2 · kind B2 · utility
10Cited by
5References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 30, 2004 |
| Grant date | Dec 11, 2007 |
| Priority date | — |
| Expiry date | Oct 19, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for processing a semiconductor substrate less than 200 μm thick has been provided. The substrate has one or a plurality of semiconductor elements, which may be identical or different. The substrate is arranged onto a chuck during processing, the front side of the substrate facing the chuck. During processing, an electrically conductive film, for example, made of metal, may be applied on the rear side of the substrate. The film may serve as electrical contact, heat sink or mechanical stabilizer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.