Spin transistor using spin-orbit coupling induced magnetic field
US7307299B2 · kind B2 · utility
9Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2005 |
| Grant date | Dec 11, 2007 |
| Priority date | — |
| Expiry date | Feb 21, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F1/404
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A spin transistor having wide ON/OFF operation margin and producing less noise is provided. The spin transistor includes a substrate having a channel, a source, a drain and a gate formed on the substrate. The source and the drain are formed to have magnetization directions perpendicular to the length direction of the channel. The ON/OFF operations of the spin transistor can be controlled by generating a spin-orbit coupling induced magnetic field to have a direction parallel or anti-parallel to the magnetization directions of the source and the drain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.