Magneto-resistive effect element and magnetic memory
US7307302B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 9, 2004 |
| Grant date | Dec 11, 2007 |
| Priority date | — |
| Expiry date | Dec 28, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
It is possible to obtain excellent heat stability even though the element is miniaturized and keep stable magnetic domains even though switching is repeated any number of times. A magneto-resistive effect element includes: a magnetization-pinned layer including a magnetic film having a spin moment oriented in a direction perpendicular to a film surface thereof and pinned in the direction; a magnetic recording layer having a spin moment oriented in a direction perpendicular to a film surface thereof; a nonmagnetic layer formed between the magnetization-pinned layer and the magnetic recording layer; and an anti-ferromagnetic film formed on at least side surfaces of the magnetization-pinned layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.