Reduced crosstalk CMOS image sensors
US7307327B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2005 |
| Grant date | Dec 11, 2007 |
| Priority date | — |
| Expiry date | Aug 4, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/184
Abstract
CMOS image sensor having high sensitivity and low crosstalk, particularly at far-red to infrared wavelengths, and a method for fabricating a CMOS image sensor. A CMOS image sensor has a substrate, an epitaxial layer above the substrate, and a plurality of pixels extending into the epitaxial layer for receiving light. The image sensor also includes at least one of a horizontal barrier layer between the substrate and the epitaxial layer for preventing carriers generated in the substrate from moving to the epitaxial layer, and a plurality of lateral barrier layers between adjacent ones of the plurality of pixels for preventing lateral diffusion of electrons in the epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.