Methods of determining an etching end point based on compensation for etching disturbances
US7307703B2 · kind B2 · utility
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6References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2004 |
| Grant date | Dec 11, 2007 |
| Priority date | — |
| Expiry date | Jan 23, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/68
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An etching end point of a plasma etch is determined by defining an etch-stop condition. A layer formed on a substrate is etched using a plasma. A luminous intensity of the plasma is measured to determine a first luminous intensity. The luminous intensity is measured again after a predetermined time to determine a second luminous intensity. A determination is made whether a disturbance occurs. Compensation is applied to the measured luminous intensity if the disturbance occurs. A determination is made whether the measured luminous intensity or the compensated luminous intensity satisfies the etch stop condition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.