Detection of row-to-row shorts and other row decode defects in memory devices
US7307896B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2005 |
| Grant date | Dec 11, 2007 |
| Priority date | — |
| Expiry date | Jun 11, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/1202
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A system and method to detect row-to-row shorts and other row decode defects in memory devices and other electronic devices having a similar data storage functionality is disclosed. A selective switching between a normal large pull-up device and a smaller one in a wordline driver path allows limiting the current in the pull-up circuit to a low value so as to detect shorts because the shorts will cause the active wordline voltage level to drop, while a wordline without shorts will operate well. A GIDL (Gate Induced Drain Leakage) reduction circuit may be used as a pull-up circuit connected to supply a bias voltage to the wordline driver associated with a wordline being tested for shorts or other defects. A test signal may be selectively generated during testing so as to supply a lower strength voltage output of the GIDL circuit (the VccpRDec output) as the bias voltage to the wordline driver. The test signal, when latched, may limit the Vccp current (by generating VccpRDec) to the row to be tested so as to detect row-to-row shorts without disturbing the VNWL (negative wordline voltage) and to reduce unnecessary stress and the P-channel breakdown in the row decodes during burn-in tes…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.