Method to fabricate a nanowire CHEMFET sensor device using selective nanowire deposition
US7309621B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2005 |
| Grant date | Dec 18, 2007 |
| Priority date | — |
| Expiry date | Mar 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of fabricating a nanowire CHEMFET sensor mechanism includes preparing a silicon substrate; depositing a polycrystalline ZnO seed layer on the silicon substrate; patterning and etching the polycrystalline ZnO seed layer; depositing an insulating layer over the polycrystalline ZnO seed layer and the silicon substrate; patterning and etching the insulating layer to form contact holes to a source region and a drain region; metallizing the contact holes to form contacts for the source region and the drain region; depositing a passivation dielectric layer over the insulating layer and the contacts; patterning the passivation layer and etching to expose the polycrystalline ZnO seed layer between the source region and the drain region; and growing ZnO nanostructures on the exposed ZnO seed layer to form a ZnO nanostructure CHEMFET sensor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.