Method for fabricating a nonvolatile memory cell
US7309632B1 · kind B1 · utility
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13Claims
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Key dates
| Filing date | Apr 14, 2007 |
| Grant date | Dec 18, 2007 |
| Priority date | — |
| Expiry date | Apr 14, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/30
Abstract
A method of fabricating a nonvolatile memory cell includes providing a substrate with a trench, with a sidewall where a tunnel oxide layer and a floating gate are successively formed, forming a control gate in the trench, performing a high density plasma deposition process to form an HDP oxide layer on the top surface of control gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.