Non-volatile and memory semiconductor integrated circuit
US7309891B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2005 |
| Grant date | Dec 18, 2007 |
| Priority date | — |
| Expiry date | Feb 3, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/30
Abstract
A semiconductor integrated circuit device includes first, second gate electrodes, first, second diffusion layers, contact electrodes electrically connected to the first diffusion layers, a first insulating film which has concave portions between the first and second gate electrodes and does not contain nitrogen as a main component, a second insulating film which is formed on the first insulating film and does not contain nitrogen as a main component, and a third insulating film formed on the first diffusion layers, first gate electrodes, second diffusion layers and second gate electrodes with the second insulating film disposed therebetween in a partial region. The second insulating film is formed to fill the concave portions and a portion between the first and second gate electrodes has a multi-layered structure containing at least the first and second insulating films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.