Method for cleaning a processing chamber and method for manufacturing a semiconductor device
US7311109B2 · kind B2 · utility
2Cited by
9References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2003 |
| Grant date | Dec 25, 2007 |
| Priority date | — |
| Expiry date | Oct 18, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for cleaning a processing chamber and manufacturing a semiconductor device by removing impurities from a substrate in the processing chamber with a plasma of a first gas including hydrogen gas. After the substrate is removed from the processing chamber, the processing chamber is etched with the plasma of a non-hydrogenous second gas. Thus, the etching selectivity can be improved and the particles are prevented from depositing and/or forming on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.