Etching composition, method of preparing the same, method of etching an oxide film, and method of manufacturing a semiconductor device
US7311857B2 · kind B2 · utility
8Cited by
6References
3Claims
0Family size
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Key dates
| Filing date | Oct 13, 2004 |
| Grant date | Dec 25, 2007 |
| Priority date | — |
| Expiry date | Feb 17, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer surfactant, and water. Using the composition in a wet etching process, an oxide layer may be selectively removed while a pattern or storage electrode including polysilicon may be effectively passivated. The oxide layer may be removed with a high etching selectivity, while at the same time minimizing damage to the polysilicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.