Laser assisted material deposition
US7311947B2 · kind B2 · utility
18Cited by
42References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2003 |
| Grant date | Dec 25, 2007 |
| Priority date | — |
| Expiry date | Sep 29, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a film on a substrate includes activating a gas precursor to form a material on the substrate by irradiating the gas precursor with electromagnetic energy at a frequency tuned to an absorption frequency of the gas precursor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.