Methods of forming capacitor structures including L-shaped cavities
US7312130B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2004 |
| Grant date | Dec 25, 2007 |
| Priority date | — |
| Expiry date | Jun 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
Methods of forming capacitor structures may include forming an insulating layer on a substrate, forming a first capacitor electrode on the insulating layer, forming a capacitor dielectric layer on portions of the first capacitor electrode, and forming a second capacitor electrode on the capacitor dielectric layer such that the capacitor dielectric layer is between the first and second capacitor electrodes. More particularly, the first capacitor electrode may define a cavity therein wherein the cavity has a first portion parallel with respect to the substrate and a second portion perpendicular with respect to the substrate. Related structures are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.