Method of fabricating nitrogen-containing gate dielectric layer and semiconductor device
US7312139B2 · kind B2 · utility
7Cited by
6References
30Claims
0Family size
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Key dates
| Filing date | Jan 3, 2005 |
| Grant date | Dec 25, 2007 |
| Priority date | — |
| Expiry date | Jan 21, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28202
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a nitrogen-containing gate dielectric layer is described. First, a gate dielectric layer is formed on a substrate by performing a dilute wet oxidation process. Then, a nitridation step is performed for doping nitrogen into the gate dielectric layer. After that, a re-oxidation step is performed for repairing the nitrogen-doped gate dielectric layer. The above steps are carried out inside the same reaction chamber. Moreover, two or more wafers can be treated inside the reaction chamber at the same time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.