Method of producing a reflection mask blank, method of producing a reflection mask, and method of producing a semiconductor device
US7314688B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 10, 2003 |
| Grant date | Jan 1, 2008 |
| Priority date | — |
| Expiry date | Jul 1, 2024 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A reflection mask blank and a method of producing a reflection mask blank by forming, on a substrate, at least a multilayer reflection film for reflecting exposure light and an absorber layer formed on the multilayer reflection film for absorbing the exposure light. In order to avoid change over lapsed time in properties of the multilayer reflection film, the substrate with the multilayer reflection film is subjected to heat treatment. The heat treatment is during deposition and/or after deposition of the multilayer reflection film. A reflection mask is made from the reflection mask blank according to a reflection mask production method and a semiconductor is made from the reflection mask according to a semiconductor production method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.