Image sensors with optical trench
US7315014B2 · kind B2 · utility
59Cited by
7References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2005 |
| Grant date | Jan 1, 2008 |
| Priority date | — |
| Expiry date | Dec 20, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A device and method for providing an optical trench structure for a pixel which guides incoming light onto the photosensor of the pixel. The optical trench structure has an optically reflecting barrier that substantially mitigates optical crosstalk. The optical trench structure is made of low dielectric constant material with an index of refraction that is less than the index of refraction of the material of surrounding layers (e.g., the substrate). This difference in refractive index causes an internal reflection into an optical path existing between a lens and pixel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.