Power FET with embedded body pickup
US7315052B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 2, 2006 |
| Grant date | Jan 1, 2008 |
| Priority date | — |
| Expiry date | Mar 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/254
Abstract
A power transistor formed on a semiconductor substrate and including a lateral array of polysilicon lines separated by alternating source and drain regions includes one or more body contact diffusion regions formed in the source regions where each body contact diffusion region has a length that extends to the edges of the two adjacent polysilicon lines, and one or more body pickup contacts where each body pickup contact is formed over a respective body contact diffusion region. In one embodiment, the body contact diffusion regions are formed in a fabrication process using ion implantation of dopants of a first type through a body diffusion mask. Each body contact diffusion region defined by an exposed area in the body diffusion mask has a drawn area that overlaps the respective two adjacent polysilicon lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.