Magnetic RAM
US7315071B2 · kind B2 · utility
2Cited by
2References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 30, 2005 |
| Grant date | Jan 1, 2008 |
| Priority date | — |
| Expiry date | Dec 30, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A memory element for a magnetic RAM, contained in a recess of an insulating layer, the recess including a portion with slanted sides extending down to the bottom of the recess, the memory element including a first magnetic layer portion substantially conformally covering the bottom of the recess and the recess portion with slanted sides and in contact, at the level of the bottom of the recess, with a conductive portion, a non-magnetic layer portion substantially conformally covering the first magnetic layer portion and a second magnetic layer portion covering the non-magnetic layer portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.