Compositions and methods for tantalum CMP
US7316603B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2005 |
| Grant date | Jan 8, 2008 |
| Priority date | — |
| Expiry date | Sep 26, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F3/06
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A composition suitable for tantalum chemical-mechanical polishing (CMP) comprises an abrasive, an organic oxidizer, and a liquid carrier therefor. The organic oxidizer has a standard redox potential (E0) of not more than about 0.5 V relative to a standard hydrogen electrode. The oxidized form comprises at least one pi-conjugated ring, which includes at least one heteroatom directly attached to the ring. The heteroatom can be a N, O, S or a combination thereof. In a method embodiment, a CMP composition comprising an abrasive, and organic oxidizer having an E0 of not more than about 0.7 V relative to a standard hydrogen electrode, and a liquid carrier therefor, is utilized to polish a tantalum-containing surface of a substrate, by abrading the surface of the substrate with the composition, preferably with the aid of a polishing pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.