High-resistance silicon wafer and process for producing the same
US7316745B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2003 |
| Grant date | Jan 8, 2008 |
| Priority date | — |
| Expiry date | Aug 6, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/21
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A high-resistance silicon wafer is manufactured, in which a gettering ability and economical efficiency is excellent and an oxygen thermal donor is effectively prevented from being generated in a heat treatment for forming a circuit, which is to be implemented on the side of a device manufacturer. In order to implement the above, a high-temperature heat treatment at 1100° C. or higher is performed on a carbon doped high-resistance and high-oxygen silicon wafer in which specific resistivity is 100 Ωcm or more and a carbon concentration is 5×1015 to 5×1017 atoms/cm3 so that a remaining oxygen concentration becomes 6.5×1017 atoms/cm3 or more (Old-ASTM). As this high-temperature treatment, an OD treatment for forming a DZ layer on a wafer surface, a high-temperature annealing treatment for eliminating a COP on the surface layer, a high-temperature heat treatment for forming a BOX layer in a SIMOX wafer manufacturing process and the like can be used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.