Patent · US Expired

Method for reading Uniform Channel Program (UCP) flash memory cells

US7317631B2 · kind B2 · utility

0Cited by

11References

13Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Achim Gratz · Dresden, DE
Mayk Roehrich · Dresden, DE
Klaus Knobloch · Radeberg, DE

Key dates

Filing date	Aug 26, 2005
Grant date	Jan 8, 2008
Priority date	—
Expiry date	Aug 26, 2025

Classification

Technology area (CPC G)Physics
CPC primaryG11C16/0416
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A flash memory cell can be read by selecting a local bit line. A read potential is applied to a memory cell transistor associated with the local bit line thereby generating a capacitive loading of the local bit line. The capacitive loading depends upon a magnitude of charge stored on a floating gate of the memory cell transistor. The capacitive loading of the local bit line can then be assessed to determine a state of the memory cell transistor, the state being related to the magnitude of the charge stored on the floating gate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.