Shielded gate trench FET with the shield and gate electrodes being connected together
US7319256B1 · kind B1 · utility
72Cited by
325References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2006 |
| Grant date | Jan 15, 2008 |
| Priority date | — |
| Expiry date | Jun 19, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A field effect transistor (FET) includes a plurality of trenches extending into a semiconductor region. Each trench includes a gate electrode and a shield electrode with an inter-electrode dielectric therebetween. The trench extends in an active region of the FET, and the shield electrode and gate electrode extend out of the trench and into a non-active region of the FET where the shield electrode and gate electrode are electrically connected together by a first interconnect layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.