Inventor · Hillsboro, OR, US

Paul Thorup

16Patents
7h-index
25Co-inventors
62Inventor score

Filing activity: Mar 24, 2006 → Jun 27, 2018

Most-cited inventions

PatentTitleAreaCited byStatus
US7319256B1 Shielded gate trench FET with the shield and gate electrodes being connected together Electricity 72 Active
US7446374B2 High density trench FET with integrated Schottky diode and method of manufacture Electricity 55 Active
US7859047B2 Shielded gate trench FET with the shield and gate electrodes connected together in non-active region Electricity 25 Active
US7473603B2 Method for forming a shielded gate trench FET with the shield and gate electrodes being connected together Electricity 25 Active
US7713822B2 Method of forming high density trench FET with integrated Schottky diode Electricity 24 Active
US8686493B2 High density FET with integrated Schottky Electricity 15 Active
US9281368B1 Split-gate trench power MOSFET with protected shield oxide Electricity 10 Active
US8680611B2 Field effect transistor and schottky diode structures Electricity 7 Active
US9865694B2 Split-gate trench power mosfet with protected shield oxide Electricity 2 Active
US10020380B2 Power device with high aspect ratio trench contacts and submicron pitches between trenches Electricity 2 Active
US7952141B2 Shield contacts in a shielded gate MOSFET Electricity 2 Active
US9741808B2 Split-gate trench power MOSFET with protected shield oxide Electricity 1 Active
US10424654B2 Power device with high aspect ratio trench contacts and submicron pitches between trenches Electricity 1 Active
US8338285B2 Shield contacts in a shielded gate MOSFET Electricity 1 Active
US10665551B2 Trench MOSFET device and the preparation method thereof Electricity 0 Active
US10032728B2 Trench MOSFET device and the preparation method thereof Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.