Multi-layer electrode and method of forming the same

US7319270B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Jingyu Lian · Plattekill, US
• Chenting Lin · Poughkeepsie, US
• Nicolas Nagel · Yokohama, JP
• Michael Wise · Washington, US

Key dates

• Filing date: Aug 30, 2004
• Grant date: Jan 15, 2008
• Expiry date: Jan 15, 2025

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S257/908

Abstract

An interconnect includes an opening formed in a dielectric layer. A conductive barrier is deposited in the opening, over which a first conductive layer is deposited. A conductive oxide is deposited over the first conductive layer, and a second conductive layer, formed from the same material as the first conductive layer, is deposited over the conductive liner.