Xenon ion beam to improve track width definition
US7320170B2 · kind B2 · utility
1Cited by
4References
5Claims
0Family size
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Key dates
| Filing date | Apr 20, 2004 |
| Grant date | Jan 22, 2008 |
| Priority date | — |
| Expiry date | Jul 7, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49052
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Using a beam of xenon ions together with a suitable mask, a GMR stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal, having sidewalls comprising a vertical section that includes all of the free layer, has been formed. This is followed by formation of the longitudinal bias and conductive lead layers in the usual way. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.