Semiconductor device fabricated by a method of reducing the contact resistance of the connection regions
US7320939B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 22, 2006 |
| Grant date | Jan 22, 2008 |
| Priority date | — |
| Expiry date | Sep 22, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device, fabricated by a method, having a semiconductor structure with a silicon region which forms at least one connection region in and/or on a surface of a substrate is disclosed. In one embodiment, the method includes i) forming, at least at the silicon region, a metal cluster layer from a first metal, such that, in the metal cluster layer, metal clusters alternate with sites where there are no metal clusters, the first metal being a non-siliciding metal at predetermined conditions, ii) depositing a metal layer of a second metal on top of the metal cluster layer, the second metal being a siliciding metal and iii) carrying out at least one heat treatment at the predetermined conditions on the second metal layer so as to form metal silicide through reaction of the second metal with the silicon region, wherein atoms of the first metal are displaced in a direction substantially perpendicular to the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.