Jacob C. Hooker
11Patents
4h-index
10Co-inventors
53Inventor score
Filing activity: Jan 15, 2004 → Sep 8, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7189648B2 | Method for reducing the contact resistance of the connection regions of a semiconductor device | Electricity | 4 | Expired |
| US9153584B2 | Transistor device and a method of manufacturing same | Electricity | 4 | Active |
| US7326631B2 | Method of manufacturing MOS transistors with gate electrodes formed in a packet of metal layers deposited upon one another | Electricity | 4 | Expired |
| US8592922B2 | Transistor device and a method of manufacturing the same | Electricity | 4 | Active |
| US7226827B2 | Method for fabricating semiconductor devices having silicided electrodes | Electricity | 3 | Expired |
| US8269286B2 | Complementary semiconductor device with a metal oxide layer exclusive to one conductivity type | Electricity | 2 | Active |
| US8766370B2 | Single metal dual dielectric CMOS device | Electricity | 0 | Active |
| US7763944B2 | Semiconductor device and method of manufacturing such a semiconductor device | Electricity | 0 | Active |
| US9646892B2 | Transistor device and a method of manufacturing same | Electricity | 0 | Active |
| US7429513B2 | Method of manufacturing a semiconductor device | Electricity | 0 | Expired |
| US7320939B2 | Semiconductor device fabricated by a method of reducing the contact resistance of the connection regions | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.