Patent · US Expired

Ion-sensitive field effect transistor and method for producing an ion-sensitive field effect transistor

US7321143B2 · kind B2 · utility

13Cited by

6References

14Claims

0Family size

Assignee

Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

Christian Kunath · Dresden, DE
Eberhard Kurth · Radebeul, DE

Key dates

Filing date	Aug 24, 2005
Grant date	Jan 22, 2008
Priority date	—
Expiry date	Jan 6, 2026

Classification

Technology area (CPC G)Physics
CPC primaryG01N27/333
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

An ion-sensitive field effect transistor includes a substrate on which there are formed a source region and a drain region. Above a channel region, the ion-sensitive field effect transistor has a gate with a sensitive layer including a metal oxide nitride mixture and/or a metal oxide nitride mixture compound.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.