Patent · US Expired

Device for capacitive pressure measurement and method for manufacturing a capacitive pressure measuring device

US7321156B2 · kind B2 · utility

3Cited by
2References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 22, 2004
Grant dateJan 22, 2008
Priority date
Expiry dateOct 20, 2024

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01L9/0073
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A device for manufacturing a capacitive pressure measurement includes an insulated base electrode, a mechanically deflectable counterelectrode composed of a layer made of at least one of a monocrystalline and polycrystalline semiconductor material, a contact arrangement for electrically connecting the electrodes, and at least one semiconductor component, all integrated onto a semiconductor substrate. The connection for the base electrode is formed by an electrically insulated conductive polycrystalline semiconductor layer. The method for manufactured the device includes the step of arranging a conductive polycrystalline semiconductor layer between two insulating layers on the semiconductor substrate for forming a base electrode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.