High frequency semiconductor device
US7321170B2 · kind B2 · utility
0Cited by
2References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 8, 2006 |
| Grant date | Jan 22, 2008 |
| Priority date | — |
| Expiry date | Aug 19, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high frequency semiconductor device includes a semiconductor substrate, a high frequency semiconductor element on the semiconductor substrate, a high frequency signal transmission line connected at a first end to the high frequency semiconductor element, a high frequency signal input/output pad connected to a second end of the high frequency signal transmission line, the high frequency signal input/output pad extending perpendicular to the length direction of the high frequency signal transmission line, and ground potential pads on opposite longitudinal sides of the high frequency signal input/output pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.