Diagonal deep well region for routing body-bias voltage for MOSFETS in surface well regions
US7323367B1 · kind B1 · utility
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20Claims
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Key dates
| Filing date | May 1, 2007 |
| Grant date | Jan 29, 2008 |
| Priority date | — |
| Expiry date | May 1, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Diagonal deep well region for routing the body-bias voltage for MOSFETS in surface well regions is provided and described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.