Monolithic multi-color, multi-quantum well semiconductor LED
US7323721B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2005 |
| Grant date | Jan 29, 2008 |
| Priority date | — |
| Expiry date | Apr 1, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A monolithic, multi-color semiconductor light emitting diode (LED) is formed with a multi-bandgap, multi-quantum well (MQW) active light emitting region which emits light at spaced-apart wavelength bands or regions ranging from UV to red. The MQW active light emitting region comprises a MQW layer stack including n quantum barriers which space apart n−1 quantum wells. Embodiments include those wherein the MQW layer stack includes quantum wells of at least two different bandgaps for emitting light of two different wavelengths, e.g., in the blue or green regions and in at least one other region, and the intensities of the emissions are adjusted to provide a preselected color of combined light emission, preferably white light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.