Patterned atomic layer epitaxy
US7326293B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2005 |
| Grant date | Feb 5, 2008 |
| Priority date | — |
| Expiry date | Dec 2, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A patterned layer is formed by removing nanoscale passivating particle from a first plurality of nanoscale structural particles or by adding nanoscale passivating particles to the first plurality of nanoscale structural particles. Each of a second plurality of nanoscale structural particles is deposited on each of corresponding ones of the first plurality of nanoscale structural particles that is not passivated by one of the plurality of nanoscale passivating particles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.