Organoelement resists for EUV lithography and methods of making the same

US7326514B2 · kind B2 · utility

Assignees

• Cornell Research Foundation, Inc. · US
• University of Wisconsin-Madison · US

Inventors

• Junyan Dai · Ithaca, US
• Christopher K. Ober · Ithaca, US
• Lin Wang · Hangzhou City, CN
• Franco Cerrina · Niskayuna, US
• Paul Franklin Nealey · Madison, US

Key dates

• Filing date: Mar 12, 2004
• Grant date: Feb 5, 2008
• Expiry date: Dec 23, 2024

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S430/106
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Resist compositions containing silicon, boron, or both silicon and boron may be used with ultra-violet lithography processes and extreme ultra-violet (EUV) lithography processes to increase the reactive ion etch resistance of the resist compositions, improve transmission of the resist materials, and to dope substrates.