Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor device
US7326627B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2007 |
| Grant date | Feb 5, 2008 |
| Priority date | — |
| Expiry date | Jul 6, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present fabrication method includes the steps of: providing a nitride film in a main surface of a semiconductor substrate; providing an upper trench, with the nitride film used as a mask; filling the upper trench with an oxide film introduced therein; removing the oxide film to expose at least a portion of a bottom of the upper trench and allowing a remainder of the oxide film to serve as a sidewall; providing a lower trench in a bottom of the upper trench, with the sidewall used as a mask; and with the upper trench having the sidewall remaining therein, providing an oxide film in the upper trench and the lower trench. This can provide a semiconductor device fabrication method and a semiconductor device preventing a contact from penetrating the device in an interconnection process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.