Semiconductor device and method for manufacturing the same
US7326641B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 3, 2004 |
| Grant date | Feb 5, 2008 |
| Priority date | — |
| Expiry date | Oct 20, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device which can enhance adhesiveness between a barrier conductive film and an organic insulating film, and prevent film-fall-off, and the manufacturing technique thereof are provided. After a silicon nitride film is formed on the main surface of semiconductor substrate, an organic insulating film is formed on the silicon nitride film. The organic insulating film is formed of a material having a dielectric constant lower than that of a silicon oxide film. Subsequently, wiring grooves are formed in the silicon nitride film and the organic insulating film by means of a photolithography technique and etching technique. An oxide film is formed by irradiating the organic insulating film with ultraviolet rays by use of excimer lamp. The ultraviolet-ray irradiation is performed in an atmosphere containing oxygen. A tantalum film serving as a barrier conductive film is formed on the organic insulating film with the mediation of the oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.