Plasma ion implantation systems and methods using solid source of dopant material
US7326937B2 · kind B2 · utility
11Cited by
8References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2005 |
| Grant date | Feb 5, 2008 |
| Priority date | — |
| Expiry date | May 12, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32412
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Plasma ion implantation apparatus includes a process chamber, a platen located in the process chamber for supporting a substrate, a dopant source including a solid dopant element and a vaporizer to vaporize dopant material from the solid dopant element, a plasma source to produce a plasma containing ions of the dopant material, and an implant pulse source to apply implant pulses to the platen for accelerating the ions of the dopant material from the plasma into the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.