Apparatus and methods for ion beam implantation using ribbon and spot beams
US7326941B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2005 |
| Grant date | Feb 5, 2008 |
| Priority date | — |
| Expiry date | May 11, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3171
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
This invention discloses an ion implantation apparatus with multiple operating modes. It has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. The invention further discloses a two-path beamline in which a second path incorporates a deceleration system incorporating energy filtering. The invention discloses methods of ion implantation in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning, and from a simple path to an s-shaped path with deceleration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.